Model of multi-bit addressable photorefractive memory.

An experimental implementation of the multi-bit addressable memory based on a two-wave mixing interaction in the photorefractive bismuth silicon oxide (BSO) is described. The method of increasing data storage density, which is due to the parallel and multi-bit processing, has been a topic of our research. Proposed method is the extension of well known multiplexing approach such as: Angle Multiplexing, Shift Multiplexing, Wavelength Multiplexing, and Phase-Code Multiplexing. The system for three-dimensional (volume holography) digital rewritable memory based on superposition of nonlinearity of the LCTV and BSO crystal is presented. Our approach can be useful as the enhancement technique of the storage density in the case of disk-type memory. The advantages and limitations of the proposed method has been described and considered. The process of real-time optical addressing memory with additional bit coding using grayscale intensity values is analyzed. We demonstrate operation of the device, and we optimize its performance with regard to the capacity of data. We present also a numerical verification of multi-bit data page.