Silicon resonant cavity enhanced photodetector based on the internal photoemission effect at 1.55 micron: fabrication and characterization
- Außenstelle Neapel, Istituto per la Microelettronica e Microsistemi (Italien)
lsirleto [at] na [dot] imm [dot] cnr [dot] it
In this paper with the aim to enhance the quantum efficiency of photodetector based on internal photoemission effect, a Resonant-cavity-enhanced (RCE) photodetector is realised and characterised. We note that even if RCE photodetectors were already exploited in previous works, the idea to incorporate into RCE structure a silicon photodetector based on internal photoemission effect had never been studied. In this paper we experimentally proved that a significant enhancement of efficiency can be obtained by using a resonant cavity structure [1] [1] M. Casalino, L. Sirleto, L. Moretti, M. Gioffrè, G. Coppola, I. Rendina. Silicon Resonant cavity enhanced photodetector based on the internal photoemission effect at 1.55 micron: fabrication and characterization. Applied Physics Letters, 92, 251104 (2008)
@inproceedings{casalino2009p72,
author = {Casalino, Maurizio and Sirleto, Luigi and Gioffrè, Mariano and Coppola, Giuseppe and Iodice, Mario and Rendina, Ivo},
title = {{Silicon resonant cavity enhanced photodetector based on the internal photoemission effect at 1.55 micron: fabrication and characterization}},
booktitle = {DGaO-Proceedings 2009},
series = {DGaO-Proceedings},
eventtitle = {110. Jahrestagung der DGaO},
eventdate = {2009-06-02/2009-06-05},
venue = {Brescia},
publisher = {Deutsche Gesellschaft für angewandte Optik e.V.},
year = {2009},
pages = {P72},
langid = {english},
url = {https://dgao-proceedings.de/paper/110-p72}
}