Silicon resonant cavity enhanced photodetector based on the internal photoemission effect at 1.55 micron: fabrication and characterization

In this paper with the aim to enhance the quantum efficiency of photodetector based on internal photoemission effect, a Resonant-cavity-enhanced (RCE) photodetector is realised and characterised. We note that even if RCE photodetectors were already exploited in previous works, the idea to incorporate into RCE structure a silicon photodetector based on internal photoemission effect had never been studied. In this paper we experimentally proved that a significant enhancement of efficiency can be obtained by using a resonant cavity structure [1] [1] M. Casalino, L. Sirleto, L. Moretti, M. Gioffrè, G. Coppola, I. Rendina. Silicon Resonant cavity enhanced photodetector based on the internal photoemission effect at 1.55 micron: fabrication and characterization. Applied Physics Letters, 92, 251104 (2008)