The Structural and Optical Characterization of PbTeO Semiconductor Thin Film

In this study, PbTeO semiconductor thin film has been produced by Chemical Bath Deposition (CBD) method onto glass substrates keeping 3 h at a bath temperature of 50 °C. The surface of the film was investigated with SEM. The structural properties of the thin film were analyzed with X-ray diffraction (XRD). The optical band gap (Eg), optical transmission (T %), reflectivity (R %), absorption coefficient (α), refraction index (n), extinction coefficient (k), dielectric constant (ɛ) of the thin film were investigated depending on deposition time and solution temperature by UV-VIS. The film thickness was measured with AFM (tapping mode). The absorption coefficient (α) was used to calculate the optical and electrical conductivities σopt and σe.