The Structural and Optical Characterization of PbTeO Semiconductor Thin Film
- 1Department of Metallurgy and Materials Engineering, Faculty of Engineering, Karabük-Universität (Türkei)
- 2Abteilung für naturwissenschaftliche Bildung, Erziehungswissenschaftliche Fakultät, Erciyes-Universität (Türkei)
fatmameydaneri [at] karabuk [dot] edu [dot] tr
In this study, PbTeO semiconductor thin film has been produced by Chemical Bath Deposition (CBD) method onto glass substrates keeping 3 h at a bath temperature of 50 °C. The surface of the film was investigated with SEM. The structural properties of the thin film were analyzed with X-ray diffraction (XRD). The optical band gap (Eg), optical transmission (T %), reflectivity (R %), absorption coefficient (α), refraction index (n), extinction coefficient (k), dielectric constant (ɛ) of the thin film were investigated depending on deposition time and solution temperature by UV-VIS. The film thickness was measured with AFM (tapping mode). The absorption coefficient (α) was used to calculate the optical and electrical conductivities σopt and σe.
@inproceedings{meydaneritezel2016p5,
author = {Meydaneri Tezel, FATMA and Kariper, İshak},
title = {{The Structural and Optical Characterization of PbTeO Semiconductor Thin Film}},
booktitle = {DGaO-Proceedings 2016},
series = {DGaO-Proceedings},
eventtitle = {117. Jahrestagung der DGaO},
eventdate = {2016-05-18/2016-05-21},
venue = {Hannover},
publisher = {Deutsche Gesellschaft für angewandte Optik e.V.},
year = {2016},
pages = {P5},
langid = {english},
url = {https://dgao-proceedings.de/paper/117-p5}
}